IPC70N04S5L4R2ATMA1 vs IPC100N04S52R8ATMA1 比較

詳細並排比較 IPC70N04S5L4R2ATMA1 由 Infineon 與 IPC100N04S52R8ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 ✓ 啟用中
Infineon
IPC100N04S52R8ATMA1 IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon

IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon

IPC100N04S52R8ATMA1 ✓ 啟用中

規格比較

參數 IPC70N04S5L4R2ATMA1 IPC100N04S52R8ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
封裝 PG-TDSON-8-34 (Surface Mount) PG-TDSON-8-34 (TDSON-8 EP)
Operating Temperature (Tj) -55°C to +175°C —
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL1 (up to 260°C peak reflow) 1 (260C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Avalanche Tested 100% (60 A production test) 100% (per Infineon standard)
RoHS 狀態 Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Tc=100C) — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) typical]
On-State Resistance RDS(on) typ @ VGS=10V — 2.8 mOhm
On-State Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max]
Power Dissipation (PD, Tc=25C) — 75 W
工作接面溫度 — -55C to +175C
RoHS / Green Product — Yes (RoHS compliant)

資料表與資源

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