IPD031N03LGATMA1 vs IPB90N06S4L04ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD031N03LGATMA1 sa pamamagitan ng Infineon at IPB90N06S4L04ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPD031N03LGATMA1 | IPB90N06S4L04ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | OptiMOS T2, N-channel enhancement mode |
| Drain-to-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ 25 °C | 90 A (Tc) | — |
| Power Dissipation (Pd) | 94 W (Tc) | — |
| RDS(on) Max @ VGS=10V | 3.1 mΩ | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | — |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | — |
| Temperature na Operasyon | -55 °C to +175 °C (junction) | — |
| Packhaging | PG-TO252-3-11 (DPAK-2) | PG-TO263-3-2 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | — |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | — |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | 1 | MSL1 (unlimited floor life) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB90N06S4L04ATMA2 |
| Drain-Source Voltage (V_DSS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 90 A |
| Pulsed Drain Current (I_D,pulse) | — | 360 A |
| Power Dissipation (P_D, Tc) | — | 150 W |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | — | 3.4 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th)] |
| Gate-Source Voltage (V_GS) | — | ±20 V |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| Peak Reflow Temperature | — | 260 °C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Tested | — | 100% avalanche-tested |
| RoHS / Halogen-Free | — | Yes (Green Product) |