IPD060N03LGATMA1 vs IPD135N03LGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD060N03LGATMA1 sa pamamagitan ng Infineon at IPD135N03LGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPD060N03LGATMA1 | IPD135N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID, TC=25C) | 50 A | — |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | 200 A | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | — |
| On-State Resistance (RDS(on), VGS=10V) | 6.0 mOhm (typ) / 7.5 mOhm (max) | — |
| On-State Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Total Gate Charge (Qg, typ) | 21 nC | — |
| Output Charge (Qoss, typ) | [DATA_NEEDED: Qoss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Power Dissipation (PD, TC=25C) | 56 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC, max) | 2.5 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | 62 C/W | — |
| Packhaging / Kaso | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK), Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (Unlimited) | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Packing | Tape & Reel (T/R), 2500 per reel | — |
| AEC-Q101 / Automotive Grade | Not qualified | — |
| Technology / Generation | OptiMOS 30V, trench MOSFET | — |
| Series | — | OptiMOS™ |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) | — | 30 A (Tc) |
| Power Dissipation (PD) | — | 31 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Gate Charge (Qg) | — | Ultra-low (per OptiMOS™ family spec) |
| Output Charge (Qoss) | — | Ultra-low (per OptiMOS™ family spec) |
| Hanay ng Temperature na Operasyon | — | -55°C to +175°C (TJ max typical for OptiMOS) |
| Lead-Free Finish | — | Yes |
| Qualification | — | Industrial (Infineon OptiMOS™ standard grade) |