IPD30N10S3L34ATMA2 vs IPD35N10S3L26ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD30N10S3L34ATMA2 sa pamamagitan ng Infineon at IPD35N10S3L26ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA2 ✓ NakahandaInfineon
IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD30N10S3L34ATMA2 | IPD35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | -55°C to +175°C |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | OptiMOS-T (N-channel enhancement mode trench MOSFET) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Level ng MSL | [DATA_NEEDED: MSL level] | MSL1 (up to 260°C peak reflow) |
| Tindminan RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD35N10S3L26ATMA1 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 35 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| On-Resistance RDS(on) max at VGS=10 V | — | 26 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.7 V |
| Continuous Power Dissipation (PD) at TC=25°C | — | 71 W |
| Packhaging | — | PG-TO252-3-11 (DPAK-2) |
| Avalanche Tested | — | 100% avalanche tested |
| RoHS / Halogen-Free | — | RoHS compliant, Green product (halogen-free) |
| Typical Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg from datasheet] |