IPD50N03S4L06ATMA1 vs IPD031N03LGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N03S4L06ATMA1 sa pamamagitan ng Infineon at IPD031N03LGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD50N03S4L06ATMA1 | IPD031N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (V_DS) | 30 V | — |
| Continuous Drain Current (I_D, Tc) | 50 A | — |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | — |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | — |
| Input Capacitance (C_iss) | 2.33 nF | — |
| Output Capacitance (C_oss) | 600 pF | — |
| Reverse Transfer Capacitance (C_rss) | 34 pF | — |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TO252-3-11 (DPAK-2) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260 C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| Tindminan RoHS | Compliant (Green Package) | Compliant |
| Technology | — | MOSFET (Metal Oxide), OptiMOS 3 |
| Drain-to-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ 25 °C | — | 90 A (Tc) |
| Power Dissipation (Pd) | — | 94 W (Tc) |
| RDS(on) Max @ VGS=10V | — | 3.1 mΩ |
| RDS(on) Max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) @ 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical/max] |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 4.5 V, 10 V |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical @ 10V Vgs] |
| Output Charge (Qoss) | — | Ultra low (per datasheet tagline) |
| Temperature na Operasyon | — | -55 °C to +175 °C (junction) |
| Mounting Tab | — | Drain (electrically connected) |
| Avalanche Energy Rated | — | Yes (per OptiMOS 3 datasheet family) |