IPD50N10S3L16ATMA2 vs IPD65R380E6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N10S3L16ATMA2 sa pamamagitan ng Infineon at IPD65R380E6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50N10S3L16ATMA2 - 100V 50A 15mΩ N-Ch OptiMOS-T MOSFET | Infineon
IPD50N10S3L16ATMA2 ✓ NakahandaInfineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΩ 10.6A | Infineon
IPD65R380E6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD50N10S3L16ATMA2 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-T | CoolMOS™ E6 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 50 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Maximum R_DS(on) at VGS=10V | 15 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Power Dissipation (Ptot) at Tc=25°C | 100 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (junction) | -55 °C to +150 °C |
| Packhaging | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (2 + Tab) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 |
| Delivery Form | Tape and Reel (T&R) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology | — | Superjunction (CoolMOS™) |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |