IPD5N25S3430ATMA1 vs IPD50N04S408ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD5N25S3430ATMA1 sa pamamagitan ng Infineon at IPD50N04S408ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD5N25S3430ATMA1 - 250V 5A N-Channel OptiMOS MOSFET | Infineon
IPD5N25S3430ATMA1 ✓ NakahandaInfineon
IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon
IPD50N04S408ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD5N25S3430ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS (planar-trench) | — |
| Drain-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 5 A | — |
| Pulsed Drain Current (IDM) | 20 A | — |
| RDS(on) max @ VGS=10V | 430 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3 V typ / 4 V max | — |
| Input Capacitance (Ciss) | 422 pF typical | — |
| Power Dissipation (PD, Tc=25°C) | 41 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TO252-3-313 (DPAK, surface mount) | PG-TO252-3-313 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Tindminan RoHS | ROHS3 Compliant | — |
| Lead Finish | Matte Tin (lead-free) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | MSL1 (260 °C peak reflow) |
| Configuration | Single, 3-pin (2+Tab) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T2 |
| Polarity | — | N-Channel |
| Mode | — | Enhancement-mode |
| Drain-Source Voltage (V DS) | — | 40 V |
| Continuous Drain Current (I D, Tc) | — | 50 A |
| Power Dissipation (P D, Tc) | — | 46 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| Avalanche Tested | — | 100 % Avalanche tested |
| Green Package (RoHS) | — | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | — | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | — | [DATA_NEEDED: Q G typical] |