IPD60R380C6ATMA1 vs IPB60R165CPATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R380C6ATMA1 sa pamamagitan ng Infineon at IPB60R165CPATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon
IPD60R380C6ATMA1 ✓ NakahandaInfineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD60R380C6ATMA1 | IPB60R165CPATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 10.6 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 380 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25C | 83 W | — |
| Operating Junction Temperature (TJ) | -55C to +150C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Technology | CoolMOS C6 Superjunction | CoolMOS CP (superjunction, N-Channel) |
| FET Type | N-Channel | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK-2) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Tindminan RoHS | Compliant | Compliant (Pb-free lead plating) |
| Drain-Tab Connection | Exposed pad (electrically connected to drain) | — |
| Continuous Drain Current (ID, Tc=25°C) | — | 21 A |
| Power Dissipation (PD, Tc=25°C) | — | 192 W |
| On-Resistance RDS(on), max (VGS=10V) | — | 165 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Total Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typical value] |
| Operating Temperature Range (TJ) | — | -55°C to +150°C |
| JEDEC Qualification | — | Qualified per JEDEC for target applications |
| dv/dt Ruggedness | — | Extreme dv/dt rated |
| Polarity / Channel | — | N-Channel |