IPD60R380C6ATMA1 vs IPB60R165CPATMA1 Comparison

Detailed side-by-side comparison of IPD60R380C6ATMA1 by Infineon and IPB60R165CPATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R380C6ATMA1 IPB60R165CPATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction CoolMOS CP (superjunction, N-Channel)
FET Type N-Channel —
Package PG-TO252-3 (DPAK) PG-TO263-3-2 (D2PAK-2)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL level] —
RoHS Status Compliant Compliant (Pb-free lead plating)
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Continuous Drain Current (ID, Tc=25°C) — 21 A
Power Dissipation (PD, Tc=25°C) — 192 W
On-Resistance RDS(on), max (VGS=10V) — 165 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Total Gate Charge (Qg, typ) — [DATA_NEEDED: Qg typical value]
Operating Temperature Range (TJ) — -55°C to +150°C
JEDEC Qualification — Qualified per JEDEC for target applications
dv/dt Ruggedness — Extreme dv/dt rated
Polarity / Channel — N-Channel

Datasheets & Resources

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