IPD65R225C7ATMA1 vs IPD65R380E6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD65R225C7ATMA1 sa pamamagitan ng Infineon at IPD65R380E6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD65R225C7ATMA1 IPD65R225C7ATMA1 - 650V 225mΩ 11A CoolMOS C7 N-FET | Infineon

IPD65R225C7ATMA1 - 650V 225mΩ 11A CoolMOS C7 N-FET | Infineon

IPD65R225C7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD65R225C7ATMA1 IPD65R380E6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS™ E6
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Technology Super-junction (SJ) / CoolMOS Superjunction (CoolMOS™)
Drain-Source Voltage (VDSS) 650 V —
Continuous Drain Current (ID) at TC 11 A —
Power Dissipation (PD) at TC 63 W —
On-Resistance RDS(on) max 225 mΩ —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
Hanay ng Temperature na Operasyon -55°C to +150°C -55 °C to +150 °C
Packhaging PG-TO252-3 (DPAK) PG-TO252-3 (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pins 3 (2 + tab) —
Level ng MSL 1 (per JEDEC J-STD-020) 1
Tindminan RoHS Compliant Compliant
Avalanche Energy Rated Yes (per datasheet) —
Drain-Source Voltage (V_DS) — 650 V
Continuous Drain Current (I_D) at T_C — 10.6 A
R_DS(on) max at V_GS=10V — 380 mΩ
R_DS(on) test conditions — 3.2 A, 10 V
Gate-Source Voltage (V_GS) max — ±20 V
Gate Threshold Voltage (V_GS(th)) — 3.5 V typ
Gate Charge (Q_G) — 39 nC at 10 V
Input Capacitance (C_iss) — 710 pF at 100 V
Power Dissipation (P_D) at T_C — 83 W

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita