IPD90N06S407ATMA2 vs IPD200N15N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD90N06S407ATMA2 sa pamamagitan ng Infineon at IPD200N15N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD200N15N3GATMA1 - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon
IPD200N15N3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD90N06S407ATMA2 | IPD200N15N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel Enhancement Mode | — |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D at T_C) | 90 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | 6.9 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | 4 V at 40 uA | — |
| Total Gate Charge (Q_G) at V_GS=10 V | 56 nC | — |
| Maximum Power Dissipation (P_D at T_C) | 79 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | -55 C to +175 C |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Packhaging | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Green Product) | — |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD200N15N3GATMA1 |
| Technology | — | OptiMOS 3 (trench) |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, TC=25C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 20 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD, TC=25C) | — | 150 W |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |
| Level ng MSL | — | 1 |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |