IPD90N06S407ATMA2 vs IPD70N10S312ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD90N06S407ATMA2 sa pamamagitan ng Infineon at IPD70N10S312ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 ✓ Nakahanda
Infineon
IPD70N10S312ATMA1 IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD90N06S407ATMA2 IPD70N10S312ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel Enhancement Mode N-Channel, Enhancement Mode
Drain-to-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D at T_C) 90 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
R_DS(on) Max at V_GS=10 V, I_D=90 A 6.9 mOhm —
Gate Threshold Voltage (V_GS(th)) 4 V at 40 uA —
Total Gate Charge (Q_G) at V_GS=10 V 56 nC —
Maximum Power Dissipation (P_D at T_C) 79 W —
Temperature ng Junction na Operasyon -55 C to +175 C —
Storage Temperature [DATA_NEEDED: storage temperature range] —
Packhaging PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK, 2 Leads + Tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Lead-Free / RoHS Yes (Green Product) —
MSL (Moisture Sensitivity Level) MSL1 (up to 260 C peak reflow) —
Automotive Qualification AEC-Q101 Qualified AEC-Q101
Avalanche Rating 100% Avalanche Tested —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IPD70N10S312ATMA1
Product Family — OptiMOS-T Power-Transistor
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc) — 70 A
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc) — 125 W
On-State Resistance (RDS(on)) — 11.1 mΩ @ 70 A, 10 V VGS
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Input Capacitance (Ciss) — 4355 pF @ 25 V
Total Gate Charge (Qg) — 65 nC @ 10 V
Operating Temperature (TJ) — -55 °C to +175 °C
Level ng MSL — MSL1 (up to 260 °C peak reflow)
Avalanche Tested — 100 % (per datasheet)
RoHS Compliance — Green product, RoHS compliant

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