IPL60R065P7AUMA1 vs IPD60R600P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R065P7AUMA1 sa pamamagitan ng Infineon at IPD60R600P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPL60R065P7AUMA1 IPL60R065P7AUMA1 - 600V 65mΩ CoolMOS P7 MOSFET | Infineon

IPL60R065P7AUMA1 - 600V 65mΩ CoolMOS P7 MOSFET | Infineon

IPL60R065P7AUMA1 ✓ Nakahanda
Infineon
IPD60R600P7ATMA1 IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL60R065P7AUMA1 IPD60R600P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Technology Family CoolMOS™ P7 (superjunction) —
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) 41 A —
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) 65 mΩ (max) —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) 201 W —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 3.5 V —
Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) 2895 pF —
Rise Time (t<sub>r</sub>) 7 ns —
Fall Time (t<sub>f</sub>) 4 ns —
Hanay ng Temperature na Operasyon -55 °C to +150 °C (T<sub>j</sub>) -55C to +150C (TJ)
Packhaging PG-VSON-4 (surface mount with exposed pad) —
Bilang ng Pins 4 —
Uri ng Pagpapasok Surface Mount Surface Mount
Channel Type N-Channel —
Polarity Single N-channel —
Drain to Source Voltage 650 V (rating per AiEMA spec) —
R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) 0.053 Ω —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Wala sa Halogen Yes —
Part Number — IPD60R600P7ATMA1
Series — CoolMOS P7
Uri ng Transistor — N-Channel MOSFET
Technology — Superjunction (SJ) / CoolMOS
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, TC) — 6 A
On-Resistance (RDS(on)) — 490 mOhm (max)
Power Dissipation (PD, TC) — 30 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Packhaging / Kaso — PG-TO252-3 (DPAK), surface mount
Generation — CoolMOS 7th generation (P7, successor to P6)
Ordering Code Suffix — ATMA1 = Tape & Reel, 13-inch

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