IPLU300N04S41R1XTMA1 vs IAUC100N04S6N015ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPLU300N04S41R1XTMA1 sa pamamagitan ng Infineon at IAUC100N04S6N015ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPLU300N04S41R1XTMA1 IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon

IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon

IPLU300N04S41R1XTMA1 ✓ Nakahanda
Infineon
IAUC100N04S6N015ATMA1 IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6N015ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPLU300N04S41R1XTMA1 IAUC100N04S6N015ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPLU300N04S41R1XTMA1 —
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS (Trench MOSFET) N-Channel Trench MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 300 A —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) 300 W —
R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) 1.15 mΩ —
Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) 151 nC —
Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) 12,090 pF —
Gate-Source Voltage (V<sub>GS</sub>) ±20 V —
Temperature ng Junction na Operasyon 175 °C —
Peak Reflow Temperature (AEC-Q) 260 °C —
Packhaging PG-HSOF-8-1 (8-PowerSFN, surface mount) PG-TDSON-8 (SSO8) 5x6 mm
Uri ng Pagpapasok Surface Mount Surface Mount
Avalanche Rating 100% Avalanche Tested —
RoHS Compliance Yes (Green Product) Compliant
Lead-Free Yes (100% lead-free) Yes
Configuration Single with built-in diode —
Packing Tape & Reel (TR) —
Product Family — OptiMOS-6 40V
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D @ T_C=25C) — 100 A
Power Dissipation (P_D @ T_C=25C) — 100 W
R_DS(on) max @ V_GS=10V — 1.5 mΩ (typical, per Infineon product page)
Gate-Source Voltage (V_GS) max — ±20 V
Hanay ng Temperature na Operasyon — -55 C to +175 C (junction, typical)
Level ng MSL — 1 (unlimited floor life)
Automotive Qualification — AEC-Q101

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