IPP120N08S403AKSA1 vs IPP100N12S305AKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP120N08S403AKSA1 sa pamamagitan ng Infineon at IPP100N12S305AKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS
IPP120N08S403AKSA1 ✓ NakahandaInfineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP120N08S403AKSA1 | IPP100N12S305AKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc) | 120 A | — |
| Pulsed Drain Current (bondwire-limited) | 245 A at 25 C | — |
| Maximum Power Dissipation (Ptot) | 278 W (Tc) | — |
| On-State Resistance (RDS(on)) | 2.8 mOhm typical at VGS=10 V, ID=100 A | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max | — |
| Total Gate Charge (Qg) | 167 nC | — |
| Input Capacitance (Ciss) | 11550 pF | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.54 K/W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | -55 °C to +175 °C |
| Packhaging | TO-220-3-1 (PG-TO220-3-1) | TO-220 (PG-TO220-3-1) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Level ng MSL | MSL1 (peak reflow up to 260 C) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% avalanche-tested | — |
| Tindminan RoHS | Compliant (Green Product) | — |
| Channel Type | N-Channel enhancement mode | — |
| Technology Family | OptiMOS | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS trench |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Kuru-kuryente | — | [DATA_NEEDED: pulsed ID value] |
| Maximum Power Dissipation (Ptot) at Tc | — | 300 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Avalanche Energy, Single Pulse | — | [DATA_NEEDED: EAS] |
| Bilang ng Pin | — | 3 |
| MSL Moisture Sensitivity Level | — | 1 (260 °C peak reflow) |
| Avalanche Tested | — | 100% tested |
| RoHS Compliance | — | Compliant (Green product) |