IQE008N03LM5ATMA1 vs BSC027N06LS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQE008N03LM5ATMA1 sa pamamagitan ng Infineon at BSC027N06LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQE008N03LM5ATMA1 IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IQE008N03LM5ATMA1 ✓ Nakahanda
Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQE008N03LM5ATMA1 BSC027N06LS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25°C 27 A —
Continuous Drain Current (ID) at TC=25°C 253 A —
On-Resistance RDS(on) Typical 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) —
Gate Threshold Voltage (VGS(th)) 2 V (at 250 µA per LCSC snippet) Logic-level
Power Dissipation at TA=25°C 2.1 W —
Power Dissipation at TC=25°C 89 W —
Packhaging PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down —
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55°C to +150°C (typical MOSFET junction rating) -55°C to +150°C
Gate-Source Voltage (VGS) Max ±20 V (typical MOSFET rating) —
Technology OptiMOS 5, Source-Down MOSFET (Metal Oxide)
Tindminan RoHS Compliant (per LCSC listing) Compliant
Level ng MSL [DATA_NEEDED: MSL level] —
Series — OptiMOS™ 5
Part Status — Active
FET Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at Tc=25°C — 100 A
Continuous Drain Current (ID) at Tc=100°C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
On-Resistance (RDS(on)) max @ VGS=10V — 2.7 mOhm
On-Resistance (RDS(on)) @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Tc=25°C — 83 W
Packhaging / Kaso — PG-TDSON-8-7 (SuperSO8 5x6)
Bilang ng Pin — 8
Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Avalanche Energy Rated — Yes
MSL (Moisture Sensitivity Level) — MSL1

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