IQE012N03LM5CGATMA1 vs IQE012N03LM5CGSCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE012N03LM5CGATMA1 sa pamamagitan ng Infineon at IQE012N03LM5CGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE012N03LM5CGATMA1 | IQE012N03LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID, Ta) | 34 A | — |
| Pulsed Drain Current (IDM, Tc) | 224 A | — |
| On-Resistance RDS(on), typ | 1.20 mOhm | — |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 107 W | 107 W |
| Technology / Process | OptiMOS 5 trench | — |
| Packhaging | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55 C to +150 C (TJ) | — |
| Gate Drive (recommended) | 10 V (logic-level compatible) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020, floor life unlimited) |
| Technology | — | OptiMOS 5 (trench MOSFET) |
| Continuous Drain Current (ID) @ Ta | — | 34 A |
| Continuous Drain Current (ID) @ Tc | — | 224 A |
| Maximum RDS(on) @ VGS=10V | — | 1.15 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ, per Merlin listing) |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |