IQE012N03LM5CGATMA1 vs IQE012N03LM5CGSCATMA1 比較
詳細並排比較 IQE012N03LM5CGATMA1 由 Infineon 與 IQE012N03LM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQE012N03LM5CGATMA1 | IQE012N03LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID, Ta) | 34 A | — |
| Pulsed Drain Current (IDM, Tc) | 224 A | — |
| On-Resistance RDS(on), typ | 1.20 mOhm | — |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 107 W | 107 W |
| Technology / Process | OptiMOS 5 trench | — |
| 封裝 | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 C to +150 C (TJ) | — |
| Gate Drive (recommended) | 10 V (logic-level compatible) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020, floor life unlimited) |
| Technology | — | OptiMOS 5 (trench MOSFET) |
| Continuous Drain Current (ID) @ Ta | — | 34 A |
| Continuous Drain Current (ID) @ Tc | — | 224 A |
| Maximum RDS(on) @ VGS=10V | — | 1.15 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ, per Merlin listing) |
| 工作接面溫度 | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |