IQE036N08NM6CGATMA1 vs IQD020N10NM5CGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE036N08NM6CGATMA1 sa pamamagitan ng Infineon at IQD020N10NM5CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 ✓ NakahandaInfineon
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
IQD020N10NM5CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE036N08NM6CGATMA1 | IQD020N10NM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction, Tj) | -55°C to +175°C |
| Packhaging | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating from datasheet] |
| Tindminan RoHS | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS™ 5 N-channel trench MOSFET |
| Configuration | Single N-channel, Source-Down | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 26 A |
| Continuous Drain Current (ID) at TC=25°C | — | [DATA_NEEDED: ID at TC=25°C from datasheet curve] |
| Pulsed Drain Current (IDM) at TC=25°C | — | 273 A |
| Static Drain-Source On-Resistance RDS(on) max | — | 2.0 mΩ (at VGS=10V) |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 333 W |
| Qualification | — | Industrial grade (Infineon OptiMOS™ 5 family) |