IQE050N08NM5CGATMA1 vs IQE031N08LM6CGSCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE050N08NM5CGATMA1 sa pamamagitan ng Infineon at IQE031N08LM6CGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ NakahandaInfineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE050N08NM5CGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (Ta) | 16 A | — |
| Continuous Drain Current (Tc) | 101 A | — |
| On-Resistance RDS(on) Max | 5.0 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| Packhaging | PG-TTFN-9-1 (Surface Mount) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Source-Down) | — |
| Gate Threshold Vgs(th) Typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| Temperature na Operasyon | -55°C to +175°C (TJ max) | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge Qg typical] | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| Hanay ng Temperature na Operasyon | — | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Avalanche Tested | — | 100% avalanche tested |
| Lead-Free | — | Yes |