IQEH68NE2LM7UCGATMA1 vs IQEH46NE2LM7UCGSCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQEH68NE2LM7UCGATMA1 sa pamamagitan ng Infineon at IQEH46NE2LM7UCGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ NakahandaInfineon
IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon
IQEH46NE2LM7UCGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQEH68NE2LM7UCGATMA1 | IQEH46NE2LM7UCGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) @ Ta | 47 A | — |
| Pulsed Drain Current (IDM) @ Tc | 338 A | — |
| Power Dissipation (PD) @ Ta | 2.5 W | — |
| Power Dissipation (PD) @ Tc | 130 W | — |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | — |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | — |
| Maximum Junction Temperature | 175 °C | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (typical for OptiMOS 7) | — |
| Packhaging | PG-TTFN-9-3 (surface mount) | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL Level] | — |
| Tindminan RoHS | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 7 (trench) |
| Packaging | Tape & Reel (per ATMA1 suffix) | — |
| Continuous Drain Current (ID) at TC | — | 440 A |
| Continuous Drain Current (ID) at TA | — | 57 A |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 150 W |
| Maximum On-Resistance (RDS(on)) | — | 0.46 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Polarity / Channel Type | — | Single N-Channel |
| Operating Mode | — | Enhancement-mode |
| Topology Suitability | — | Hard- and soft-switching |