IRF1010ZPBF vs IRF1405PBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF1010ZPBF sa pamamagitan ng Infineon at IRF1405PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF1010ZPBF | IRF1405PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc | 75 A (Tc=25C) | — |
| Power Dissipation (Pd) at Tc | 140 W (Tc=25C) | — |
| On-Resistance (Rds on) Max | [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) | — |
| Total Gate Charge (Qg) | 63 nC (typ, per Mouser listing) | — |
| MOSFET Operating Mode | Enhancement | — |
| Packhaging | TO-220AB (3-pin + tab), Through Hole | TO-220AB (through-hole) |
| Configuration | Single MOSFET | — |
| Maximum Junction Temperature | 175 C | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Qualification | JEDEC industry standard qualification | JEDEC qualified, optimized for switching below 100 kHz |
| Avalanche Rating | Improved repetitive avalanche rated | — |
| Tindminan RoHS | Compliant (PBF = Pb-free) | PbF suffix indicates lead-free / RoHS compliant |
| Lead Status | Lead Free | — |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: gate threshold voltage range] | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | — | PbF (lead-free, RoHS compliant) |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology | — | HEXFET (Stripe Planar cell structure) |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | — | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 330 W |
| R_DS(on) Maximum | — | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | — | 175 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Single Pulse Avalanche Energy (E_AS) | — | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | — | [DATA_NEEDED: thermal resistance R_theta_JC] |