IRF1010ZPBF vs IRF1405PBF موازنہ
تفصیلی ساتھ ساتھ موازنہ از IRF1010ZPBF بذریعہ Infineon اور IRF1405PBF بذریعہ Infineon. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
خصوصیات کا موازنہ
| پیرامیٹر | IRF1010ZPBF | IRF1405PBF |
|---|---|---|
| برانڈ | Infineon | Infineon |
| زمرہ | MOSFETs | MOSFETs |
| لائف سائیکل کی حالت | فعال | فعال |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc | 75 A (Tc=25C) | — |
| Power Dissipation (Pd) at Tc | 140 W (Tc=25C) | — |
| On-Resistance (Rds on) Max | [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) | — |
| Total Gate Charge (Qg) | 63 nC (typ, per Mouser listing) | — |
| MOSFET Operating Mode | Enhancement | — |
| پیکیج | TO-220AB (3-pin + tab), Through Hole | TO-220AB (through-hole) |
| Configuration | Single MOSFET | — |
| Maximum Junction Temperature | 175 C | — |
| ماؤنٹنگ ٹائپ | Through Hole | Through Hole |
| Qualification | JEDEC industry standard qualification | JEDEC qualified, optimized for switching below 100 kHz |
| Avalanche Rating | Improved repetitive avalanche rated | — |
| RoHS اسٹیٹس | Compliant (PBF = Pb-free) | PbF suffix indicates lead-free / RoHS compliant |
| Lead Status | Lead Free | — |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: gate threshold voltage range] | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | — | PbF (lead-free, RoHS compliant) |
| ٹرانزسٹر کی قسم | — | N-Channel MOSFET |
| Technology | — | HEXFET (Stripe Planar cell structure) |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | — | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 330 W |
| R_DS(on) Maximum | — | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | — | 175 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Single Pulse Avalanche Energy (E_AS) | — | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | — | [DATA_NEEDED: thermal resistance R_theta_JC] |