IRF1310NSTRLPBF vs IRF1310NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF1310NSTRLPBF sa pamamagitan ng Infineon at IRF1310NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF1310NSTRLPBF | IRF1310NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | 42 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM value] |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 73.3 nC | 73.3 nC |
| Power Dissipation (PD) at TC=25C | 160 W | 160 W |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55 C to +175 C |
| Packhaging | D2PAK (TO-263AB) | TO-220AB (through-hole) |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Technology | IR MOSFET (HEXFET) | HEXFET |
| Built-in Diode | Yes (intrinsic body diode) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Configuration | Single with built-in diode | — |
| FET Type | — | N-Channel |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 36 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs value] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd value] |
| Maximum Junction Temperature | — | 175 C |
| Tindminan RoHS | — | Compliant (PBF suffix) |