IRF4905PBF vs TJ30S06M3L(T6L1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF4905PBF sa pamamagitan ng Infineon at TJ30S06M3L(T6L1 sa pamamagitan ng Toshiba. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF4905PBF TJ30S06M3L(T6L1
Brand Infineon Toshiba
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type P-Channel —
Technology HEXFET (IR MOSFET) U-MOS (Silicon P-Channel MOS)
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC -74 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC 200 W —
On-Resistance RDS(on) max at VGS=-10V 20 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Total Gate Charge (Qg) 120 nC —
Hanay ng Temperature na Operasyon -55 °C to +175 °C (junction) -55°C to +175°C (Tj)
Packhaging TO-220AB (through-hole) DPAK+ (TO-252-3)
Pin Configuration Gate - Drain - Source (left to right) —
Uri ng Pagpapasok Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
Level ng MSL 1 (not moisture-sensitive for TO-220) —
Polarity — P-Channel
Drain-Source Voltage (VDSS) — -60 V
Gate-Source Voltage (VGSS) — +10 V / -20 V
Continuous Drain Current (ID) @ Tc=25°C — -30 A
Power Dissipation (PD) @ Tc=25°C — 68 W
RDS(ON) Max @ VGS=-10 V — 21.8 mΩ
RDS(ON) Typ @ VGS=-10 V — 16.8 mΩ
Gate Threshold Voltage (Vth) — -3.0 V (typ) @ VDS=-1 mA
Drain Leakage (IDSS) Max — -10 µA @ VDS=-60 V
Input Capacitance (Ciss) — 3950 pF
Automotive Qualification — AEC-Q101

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