IRFML8244TRPBF vs IRFR120NTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFML8244TRPBF sa pamamagitan ng Infineon at IRFR120NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFML8244TRPBF IRFML8244TRPBF - 25V 5.8A N-Ch MOSFET, 24mOhm | Infineon

IRFML8244TRPBF - 25V 5.8A N-Ch MOSFET, 24mOhm | Infineon

IRFML8244TRPBF ✓ Nakahanda
Infineon
IRFR120NTRPBF IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFML8244TRPBF IRFR120NTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET —
Technology IR MOSFET (HEXFET) HEXFET (IR MOSFET fifth generation)
Drain-to-Source Voltage (VDS) 25 V 100 V
Continuous Drain Current (ID) 5.8 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max +/- 20 V —
RDS(on) max @ VGS=10V 24 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) 5.4 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Power Dissipation (PD) max 1.25 W (Ta) —
Hanay ng Temperature na Operasyon -55 C to +150 C (junction) —
Packhaging SOT-23-3 (TO-236-3, SC-59) TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL1 —
Pin Configuration Industry-standard SOT-23 pinout (G-D-S) —
Tindminan RoHS Compliant (Pb-free, halogen-free) —
Qualification Consumer grade —
Continuous Drain Current (ID) at TC=25C — 9.4 A
Maximum Power Dissipation (PD) at TC=25C — 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max — 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2 V to 4 V typical
Total Gate Charge (Qg) typical — 16.7 nC
Gate-to-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Hanay ng Temperature ng Junction na Operasyon — -55C to +175C
Channel Type — N-Channel Enhancement Mode
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max — [DATA_NEEDED: RthJC]
Lead-Free / RoHS Status — Lead-Free, RoHS Compliant

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita