IRFR5305TRPBF vs IRF5305PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5305TRPBF sa pamamagitan ng Infineon at IRF5305PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR5305TRPBF IRF5305PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V —
Continuous Drain Current (ID) at TC=25C 31 A -31 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
Hanay ng Temperature na Operasyon -55 C to +175 C —
Packhaging TO-252AA (DPAK) TO-220AB (through-hole, 3-pin + tab)
Uri ng Pagpapasok Surface Mount Through Hole
Technology HEXFET (IR MOSFET) HEXFET (planar DMOS)
Level ng MSL 1 —
Tindminan RoHS Compliant (Pb-free PBF suffix) Compliant
Lead-Free Finish Yes (PBF suffix) —
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -55 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at TC=25C — 110 W
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V — 60 mOhm (typical)
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A — [DATA_NEEDED: max RDS(on) at -10V]
Total Gate Charge (Qg) — 42 nC (typical)
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Turn-On Delay Time (td(on)) — [DATA_NEEDED: td(on)]
Turn-Off Delay Time (td(off)) — [DATA_NEEDED: td(off)]
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Thermal Resistance, Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA]
Temperature ng Junction na Operasyon — -55C to +175C
Lead-Free Plating (PBF suffix) — Yes (Pb-free)

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