IRFR5505TRPBF vs IRLU024NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5505TRPBF sa pamamagitan ng Infineon at IRLU024NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR5505TRPBF | IRLU024NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | — |
| Polarity | P-Channel | — |
| Technology | IR MOSFET (HEXFET 5th generation) | HEXFET Power MOSFET (5th generation) |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | 17 A |
| Pulsed Drain Current (IDM) | -72 A | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | — |
| Total Gate Charge (Qg) | 21.3 nC | 10 nC (typical, per listing) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | 110 C/W (50 C/W PCB-mounted) |
| Packhaging | TO-252AA (DPAK), surface mount | IPAK (TO-251AA), Through Hole |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Tindminan RoHS | Compliant (PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Part Number | — | IRLU024NPBF |
| FET Type | — | N-Channel, Logic-Level |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| On-Resistance RDS(on) max at VGS=10V | — | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free plating) |
| Qualification | — | JEDEC standard |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |