IRFS52N15DTRLP vs IRFS52N15DPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFS52N15DTRLP sa pamamagitan ng Infineon at IRFS52N15DPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFS52N15DTRLP | IRFS52N15DPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | HEXFET (Planar) | HEXFET (Planar Cell) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) | — |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) | — |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) | — |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge in nC] | 60 nC (typical) |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd in nC] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss in pF] | [DATA_NEEDED: Ciss] |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) | — |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC in C/W] | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA in C/W] | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction) | — |
| Packhaging | D2PAK (TO-263) surface mount | D2PAK (TO-263) Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source) + tab | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free Finish | Yes (matte tin) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020, typical for D2PAK) | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) @ TC=25C | — | 51 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| RDS(on) max @ VGS=10V | — | 32 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Power Dissipation (PD) @ TA=25C | — | 3.8 W |
| Power Dissipation (PD) @ TC=25C | — | 230 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Qualification Standard | — | JEDEC |
| Lead-Free | — | Yes |