IRLB4030PBF vs IRFB4310PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLB4030PBF sa pamamagitan ng Infineon at IRFB4310PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRLB4030PBF IRFB4310PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 180 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 4.3 mOhm 7 mOhm
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) 87 nC 170 nC
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] —
Power Dissipation (PD) at Tc 370 W —
Hanay ng Temperature na Operasyon -55C to +175C -55C to +175C (junction)
Packhaging TO-220AB TO-220AB (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Technology HEXFET (StrongIRFET family) HEXFET (IR MOSFET)
Logic Level Drive Yes (optimized for 4.5 V to 10 V VGS) —
Qualification JEDEC —
Tindminan RoHS Compliant Compliant
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=25C — 130 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Maximum Power Dissition (PD) at Tc=25C — 300 W
On-Resistance RDS(on) typical at VGS=10V — 5.6 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS maximum rating]
Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Avalanche Rated — Yes
Lead-Free — Yes (Pb-free PBF suffix)

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