IRLML0030TRPBF vs IRLML6346TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML0030TRPBF sa pamamagitan ng Infineon at IRLML6346TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLML0030TRPBF | IRLML6346TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | — |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | — |
| Total Gate Charge (Qg) | 3.6 nC typical | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | — |
| Packhaging | Micro3 / SOT-23 (3-pin) | Micro3 / SOT-23 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | HEXFET Power MOSFET |
| Level ng MSL | 1 (unlimited floor life per JEDEC J-STD-020) | 1 |
| Soldering | Wave-solder capable | — |
| Qualification | JEDEC standard | — |
| Tindminan RoHS | Compliant | Compliant |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) | — | 3.4 A (TA=25C) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | — | 63 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Drive Capability | — | 2.5V logic-level |
| Maximum Power Dissipation (PD) | — | 1.3 W (TA=25C, 1in2 FR4) |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Lead-Free Finish | — | Yes (PBF suffix) |