ISC015N04NM5ATMA1 vs BSC010N04LSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC015N04NM5ATMA1 sa pamamagitan ng Infineon at BSC010N04LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
ISC015N04NM5ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | ISC015N04NM5ATMA1 | BSC010N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 40V Normal Level | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | — |
| Continuous Drain Current (ID) at Ta=25C | 33 A | — |
| Continuous Drain Current (ID) at Tc=25C | 206 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 115 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction, per OptiMOS 5) | -55C to +150C |
| Packhaging / Kaso | PG-TDSON-8 FL (SuperSO8 5x6 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | 1 (per Infineon SuperSO8 family) | 1 |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Ta=25C) | — | 38 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.0 mOhm |
| On-Resistance RDS(on) Test Condition | — | VGS = 10 V, ID = 50 A |
| Gate Threshold Voltage VGS(th) Typ | — | 2 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc=25C) | — | 139 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Packhaging | — | PG-TDSON-8 FL (SuperSO8 5x6) |
| RoHS / Halogen-Free | — | RoHS compliant, halogen-free |
| Avalanche Rated | — | 100% avalanche tested |