ISC015N04NM5ATMA1 vs BSC010N04LSATMA1 Comparison
Detailed side-by-side comparison of ISC015N04NM5ATMA1 by Infineon and BSC010N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC010N04LSATMA1
BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
BSC010N04LSATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N04NM5ATMA1 | BSC010N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 40V Normal Level | β |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | β |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | β |
| Continuous Drain Current (ID) at Ta=25C | 33 A | β |
| Continuous Drain Current (ID) at Tc=25C | 206 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 115 W | β |
| Operating Temperature Range | -55 C to +175 C (junction, per OptiMOS 5) | -55C to +150C |
| Package / Case | PG-TDSON-8 FL (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 (per Infineon SuperSO8 family) | 1 |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | β |
| Transistor Polarity | β | N-Channel |
| Drain-Source Breakdown Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | +/- 20 V |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Continuous Drain Current (ID, Ta=25C) | β | 38 A |
| On-Resistance RDS(on) Max @ VGS=10V | β | 1.0 mOhm |
| On-Resistance RDS(on) Test Condition | β | VGS = 10 V, ID = 50 A |
| Gate Threshold Voltage VGS(th) Typ | β | 2 V |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc=25C) | β | 139 W |
| Power Dissipation (Ta=25C) | β | 2.5 W |
| Package | β | PG-TDSON-8 FL (SuperSO8 5x6) |
| RoHS / Halogen-Free | β | RoHS compliant, halogen-free |
| Avalanche Rated | β | 100% avalanche tested |