ISC037N12NM6ATMA1 vs IAUC120N06S5L015ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC037N12NM6ATMA1 sa pamamagitan ng Infineon at IAUC120N06S5L015ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 ✓ NakahandaInfineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC037N12NM6ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (Vds) | 120 V | — |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| Packhaging | PG-TDSON-8 FL (SuperSO8) | PG-TDSON-8-43 (Surface Mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (exposed pad) |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | -55C to +175C (Tj) |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |