ISC058N04NM5ATMA1 vs BSC0902NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC058N04NM5ATMA1 sa pamamagitan ng Infineon at BSC0902NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro ISC058N04NM5ATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 40V Normal Level —
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID, Tc=25C) 63 A —
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Packhaging PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET —
Hanay ng Temperature na Operasyon -55C to +175C -55C to +150C (Tj)
RoHS Compliance RoHS Compliant Compliant (Pb-free lead plating)
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Qualification — JEDEC qualified for target applications
Wala sa Halogen — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

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