ISC060N10NM6ATMA1 vs BSZ096N10LS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC060N10NM6ATMA1 sa pamamagitan ng Infineon at BSZ096N10LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ NakahandaInfineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC060N10NM6ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 100 V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta | 15 A | — |
| Continuous Drain Current (ID) at Tc | 97 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | -55 °C to +150 °C (junction) |
| Packhaging | PG-TDSON-8 FL (5.15 x 6.15 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | OptiMOS 5 trench MOSFET |
| Polarity | N-Channel | N-Channel |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (VDS max) | — | 100 V |
| Gate-Source Voltage (VGS max) | — | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 °C) | — | 40 A |
| Maximum Silicon Drain Current (ID max) | — | 62 A |
| Pulse Drain Current (ID,pulse) | — | 160 A |
| On-Resistance RDS(on) max | — | 9.6 mΩ at VGS=10 V |
| Total Power Dissipation (Ptot, TC=25 °C) | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | Logic-level (low single-volt range) |
| Diode Continuous Forward Current (IS) | — | 40 A (TC=25 °C) |
| Diode Forward Voltage (VSD) | — | 0.85 V typ, 1.2 V max at IF=20 A |
| Gate Drive | — | Logic-level compatible |
| ESD Protection | — | Yes (gate-integrated) |
| Packaging Code | — | ATMA1 (tape and reel) |