ISC060N10NM6ATMA1 vs BSZ096N10LS5ATMA1 比較

詳細並排比較 ISC060N10NM6ATMA1 由 Infineon 與 BSZ096N10LS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 ISC060N10NM6ATMA1 BSZ096N10LS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 100 V —
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta 15 A —
Continuous Drain Current (ID) at Tc 97 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance (RDS(on)) 6 mΩ at VGS = 10 V, ID = 25 A —
Gate-Source Threshold Voltage (VGS(th)) 3.3 V (typical) —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 125 W —
工作溫度範圍 -55 °C to +175 °C (TJ) -55 °C to +150 °C (junction)
封裝 PG-TDSON-8 FL (5.15 x 6.15 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
安裝類型 Surface Mount Surface Mount
Technology OptiMOS 6 (thin-wafer trench) OptiMOS 5 trench MOSFET
Polarity N-Channel N-Channel
RoHS 狀態 Compliant Compliant
MSL 等級 1 (per JEDEC J-STD-020) —
Product Family — OptiMOS 5
Drain-Source Voltage (VDS max) — 100 V
Gate-Source Voltage (VGS max) — 20 V (typical)
Continuous Drain Current (ID, TC=25 °C) — 40 A
Maximum Silicon Drain Current (ID max) — 62 A
Pulse Drain Current (ID,pulse) — 160 A
On-Resistance RDS(on) max — 9.6 mΩ at VGS=10 V
Total Power Dissipation (Ptot, TC=25 °C) — 69 W
Gate Threshold Voltage VGS(th) — Logic-level (low single-volt range)
Diode Continuous Forward Current (IS) — 40 A (TC=25 °C)
Diode Forward Voltage (VSD) — 0.85 V typ, 1.2 V max at IF=20 A
Gate Drive — Logic-level compatible
ESD Protection — Yes (gate-integrated)
Packaging Code — ATMA1 (tape and reel)

資料表與資源

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