ISZ019N03L5SATMA1 vs ISZ033N03LF2SATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISZ019N03L5SATMA1 sa pamamagitan ng Infineon at ISZ033N03LF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISZ033N03LF2SATMA1 ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon

ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon

ISZ033N03LF2SATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISZ019N03L5SATMA1 ISZ033N03LF2SATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 (<= 40V) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 22 A 20 A
Continuous Drain Current (ID) at TC=25C 40 A 109 A
RDS(on) at VGS=10V 1.9 mΩ (typical, ID=20A) —
Gate Threshold Voltage (VGS(th)) 2 V (typical) 2.35 V max @ 30 uA
Gate-Source Voltage Rating (VGS) ±20 V —
Total Gate Charge (Qg) 44 nC at VGS=10V [DATA_NEEDED: Qg typ]
Input Capacitance (Ciss) 2800 pF at VDS=15V —
Packhaging PG-TSDSON-8-FL (5x6 mm) PG-TSDSON-8 FL (8-pin)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C (TJ max) —
Level ng MSL 1 (per JEDEC J-STD-020) —
RoHS / REACH Compliant —
Avalanche Rated Yes —
RG-tested 100% —
FET Type — N-Channel
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TA=25C — 3 W
Power Dissipation (PD) at TC=25C — 71 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at 10V VGS]
Temperature ng Junction na Operasyon — -55 C to +175 C
Technology — OptiMOS 5
Tindminan RoHS — Compliant

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