ISZ072N06NM6ATMA1 vs BSC014NE2LSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISZ072N06NM6ATMA1 sa pamamagitan ng Infineon at BSC014NE2LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | ISZ072N06NM6ATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | 33 A |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Pwersang Pinahihigpit (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Packhaging | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TDSON-8-7 (SuperSO8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C ( Tj max 175C ) | — |
| Technology | OptiMOS 6 trench MOSFET | N-Channel MOSFET (OptiMOS 25V) |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Tc) | — | 74 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +150 °C |
| Lead-Free | — | Yes |