K3LKBKB0BM-MGCP vs K3LK8K80CM-MFCP Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K3LKBKB0BM-MGCP sa pamamagitan ng Samsung Electronics at K3LK8K80CM-MFCP sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K3LKBKB0BM-MGCP - 32Gbit LPDDR5 DRAM 6400Mbps | Samsung
K3LKBKB0BM-MGCP ✓ NakahandaSamsung Electronics
K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung
K3LK8K80CM-MFCP ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K3LKBKB0BM-MGCP | K3LK8K80CM-MFCP |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $46.62 | — |
| Uri ng Memory | DRAM (LPDDR5 SDRAM) | LPDDR5 SDRAM |
| Laki ng Memory | 32 Gbit | — |
| Organisasyon | 1G x 32 | [DATA_NEEDED: organization (x width)] |
| Rate ng Data | 6400 Mbps per pin | — |
| Supply Voltage Rails | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| Interface | LPDDR5 x32 | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| Packhaging | FBGA-315 | 315-ball FBGA (MFCP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -25C to +85C | -40 C to +105 C (automotive-grade) |
| Technology Generation | LPDDR5 (JEDEC LPDDR5 family) | — |
| Tindminan RoHS | Compliant | unknown |
| Density per Package | 4 GB (32 Gbit) | — |
| Refresh | Self-refresh and auto-refresh (LPDDR5 standard) | — |
| Application Segment | Mobile, embedded, industrial computing | — |
| Standby / Deep Sleep | LPDDR5 deep-sleep power states | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Access Time / Latency | [DATA_NEEDED: CAS latency] | — |
| Density | — | 48 Gbit (6 GB) |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| Ball Count | — | 315 |
| Volte ng Pagbibigay | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |