K4A8G045WB-BCRC vs K4A8G085WB-BCRC Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G045WB-BCRC sa pamamagitan ng Samsung Electronics at K4A8G085WB-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ Nakahanda
Samsung Electronics
K4A8G085WB-BCRC K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung

K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung

K4A8G085WB-BCRC ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K4A8G045WB-BCRC K4A8G085WB-BCRC
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organisasyon 2G x 4 1G x 8
Speed 2400 Mbps —
Supply Voltage (VDD/VDDQ) 1.2 V —
Process Technology Samsung B-die —
Interface CMOS, differential clock (CK/CK#) —
Refresh Cycles 8192 8192
Maximum Supply Current 211.7 mA —
Temperature na Operasyon 0 C to 85 C 0°C to 85°C
Packhaging 78-ball FBGA (PBGA78) 78-ball FBGA
Terminals 78 —
Uri ng Pagpapasok Surface Mount —
Key DDR4 Features Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset —
DLL Mode Timing specified for DLL-enabled operation —
Tindminan RoHS Compliant —
Rate ng Data — 2400 Mbps
Volte ng Pagbibigay — 1.2 V
Number of Terminals — 78
Access Time — 0.175 ns
Technology — CMOS
Burst Length — 8 and 4
On-Die Termination — Yes
Auto-Refresh — Yes
Self-Refresh — Yes
RoHS — Compliant

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