K4AAG085WM-BCTD vs H5ANAG8NBJR-VKC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG085WM-BCTD sa pamamagitan ng Samsung Electronics at H5ANAG8NBJR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG085WM-BCTD - 16Gb DDR4-2666 SDRAM, 1.2V | Samsung
K4AAG085WM-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG085WM-BCTD | H5ANAG8NBJR-VKC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $9.95 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 16 Gb | — |
| Organisasyon | 2G x 8 | 2G x 8 |
| Speed Grade | DDR4-2666 | DDR4-2666 (2666 Mbps/pin) |
| Volte ng Pagbibigay | 1.2 V | 1.14 V to 1.26 V (VDDQ) |
| Packhaging | FBGA-78 | FBGA-78 |
| Temperature na Operasyon | 0C to +85C | 0C to +85C |
| Uri ng Interface | Parallel (DDR4) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Clock Rate | 1333 MHz | — |
| Rate ng Data | 2666 MT/s | — |
| Bank Group Architecture | DDR4 bank groups | — |
| Density Class | 16 Gbit monolithic DRAM | — |
| Application Class | Industrial / embedded memory | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant, Lead-Free and Halogen-Free |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 16 Gbit |
| Clock Frequency | — | 1.6 GHz (internal interface per distributor data) |
| Standby Current | — | 30 mA (operating, per distributor listing) |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| Refresh Interval | — | [DATA_NEEDED: tREFI refresh interval] |