K4B4G1646D-BFMA vs K4B4G1646D-BYH90 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BFMA sa pamamagitan ng Samsung Electronics at K4B4G1646D-BYH90 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BFMA - 4Gb DDR3 SDRAM x16 96FBGA | Samsung
K4B4G1646D-BFMA ✓ NakahandaSamsung Electronics
K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYH90 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646D-BFMA | K4B4G1646D-BYH90 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3 SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasyon | 256M x 16 | 512M x 16 |
| Rate ng Data | 1866 Mbps | 2133 Mbps/pin |
| Volte ng Pagbibigay | 1.5V | 1.35V (1.283V to 1.45V) |
| Packhaging | 96-ball FBGA | 96-ball FBGA (TFBGA) |
| Ball Pitch | 0.8mm | 0.8 mm |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 (with burst chop) | 8 and 4 (with burst chop) |
| Latensya ng CAS | Programmable | Programmable (e.g., 11, 12, 13) |
| On-Die Termination | Yes | Yes (ODT pin) |
| Temperature Range | 0°C to 95°C (case) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | Yes |
| I/O Interface | — | x16 |
| Temperature na Operasyon | — | 0°C to +85°C |
| ZQ Calibration | — | Yes (240-ohm resistor to ground) |