K4B4G1646D-BFMA vs K4B4G1646D-BYH90 对比
详细并排对比 K4B4G1646D-BFMA 出自 Samsung Electronics 和 K4B4G1646D-BYH90 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646D-BFMA | K4B4G1646D-BYH90 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $8.80 |
| 存储器类型 | DDR3 SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| 存储组织 | 256M x 16 | 512M x 16 |
| 数据速率 | 1866 Mbps | 2133 Mbps/pin |
| 电源电压 | 1.5V | 1.35V (1.283V to 1.45V) |
| 封装 | 96-ball FBGA | 96-ball FBGA (TFBGA) |
| Ball Pitch | 0.8mm | 0.8 mm |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 (with burst chop) | 8 and 4 (with burst chop) |
| CAS 延迟 | Programmable | Programmable (e.g., 11, 12, 13) |
| On-Die Termination | Yes | Yes (ODT pin) |
| Temperature Range | 0°C to 95°C (case) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | Yes |
| I/O Interface | — | x16 |
| 工作温度 | — | 0°C to +85°C |
| ZQ Calibration | — | Yes (240-ohm resistor to ground) |