K4RAH086VB-BIQK vs K4RAH165VB-BIQK Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K4RAH086VB-BIQK sa pamamagitan ng Samsung Electronics at K4RAH165VB-BIQK sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K4RAH086VB-BIQK K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK ✓ Nakahanda
Samsung Electronics
K4RAH165VB-BIQK K4RAH165VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH165VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH165VB-BIQK ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K4RAH086VB-BIQK K4RAH165VB-BIQK
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory DDR5 SDRAM DDR5 SDRAM
Density 16 Gb 16 Gb
Organisasyon 2G x 8 1G x 16
Rate ng Data 4800 Mbps/pin 4800 Mbps (MT/s)
Core Supply Voltage 1.1 V (nominal) —
Packhaging 82FBGA [DATA_NEEDED: exact package ball count / FBGA designation]
Configuration X8 —
Speed Grade BIQK (-BIQK bin) —
ECC On-die ECC (DDR5 standard) —
Interface DDR5 (CA reduced pin count) —
Burst Length 16 / 32 —
Operating Mode DLL enabled —
Tindminan RoHS Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) —
Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Latensya ng CAS [DATA_NEEDED: CAS latency (CL)] —
Refresh [DATA_NEEDED: refresh rate specification] —
Level ng MSL [DATA_NEEDED: moisture sensitivity level] —
Supply Voltage (VDD) — 1.1 V
On-Die ECC — Yes
Auto Self-Refresh — Yes
Asynchronous Reset — Yes
Write Leveling — Yes
CRC Function — Yes
ZQ Calibration — Yes
DLL Enabled Mode — Yes (spec mode per datasheet)
Brand — Samsung Semiconductor

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