K6X0808C1D-GF70000 vs K6X0808C1D-BF70T Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K6X0808C1D-GF70000 sa pamamagitan ng Samsung Electronics at K6X0808C1D-BF70T sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP
K6X0808C1D-GF70000 ✓ NakahandaSamsung Electronics
K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung
K6X0808C1D-BF70T ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K6X0808C1D-GF70000 | K6X0808C1D-BF70T |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | SRAM - Asynchronous | SRAM - Asynchronous |
| Laki ng Memory | 256 Kbit | 256 Kbit |
| Organisasyon | 32K x 8 bit | — |
| Interface | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage - Min | 4.5 V | — |
| Supply Voltage - Max | 5.5 V | — |
| Technology | Low Power CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | 15 bit (A0-A14) |
| Width ng Data Bus | 8 bit (tri-state I/O) | 8 bit (I/O0-I/O7) |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Input/Output Levels | TTL compatible | — |
| Packhaging | 28-SOP | 28-SOP |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40C to +85C (TA) |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Memory Organization | — | 32K x 8 |
| Memory Interface | — | Parallel |
| Write Cycle Time - Word, Page | — | 70 ns |
| Voltage - Supply | — | 4.5 V to 5.5 V |
| Process Technology | — | CMOS |
| I/O Compatibility | — | TTL compatible |
| Refresh Requirement | — | None (fully static operation) |