K9CHGY8S5C-CCK0 vs K9PKGY8S7M-CCK0 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K9CHGY8S5C-CCK0 sa pamamagitan ng Samsung Electronics at K9PKGY8S7M-CCK0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ NakahandaSamsung Electronics
K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung
K9PKGY8S7M-CCK0 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K9CHGY8S5C-CCK0 | K9PKGY8S7M-CCK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | — |
| Packhaging | BGA-316 | BGA |
| Organisasyon | x8 (8-bit data access), quad CE configuration | — |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | — |
| Uri ng Interface | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Uri ng Pagpapasok | Surface Mount (BGA reflow) | Surface Mount |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Lead free / RoHS compliant |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: P/E cycle endurance] |
| Memory Capacity | — | 128 Gb (16 GB) |
| Uri ng Memory | — | NAND Flash |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Interface | — | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Volte ng Pagbibigay | — | [DATA_NEEDED: supply voltage] |
| Block Size | — | [DATA_NEEDED: block size] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |