K9CHGY8S5C-CCK0 vs K9PKGY8S7M-CCK0 مقایسه
مقایسه دقیق کنار به کنار K9CHGY8S5C-CCK0 توسط Samsung Electronics و K9PKGY8S7M-CCK0 توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ فعال
مقایسه مشخصات
| پارامتر | K9CHGY8S5C-CCK0 | K9PKGY8S7M-CCK0 |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | Memory ICs | Memory ICs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | — |
| بسته‌بندی | BGA-316 | BGA |
| سازمان | x8 (8-bit data access), quad CE configuration | — |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | — |
| نوع رابط | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| دمای کاری | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| نوع نصب | Surface Mount (BGA reflow) | Surface Mount |
| وضعیت RoHS | [DATA_NEEDED: RoHS status] | Lead free / RoHS compliant |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: P/E cycle endurance] |
| Memory Capacity | — | 128 Gb (16 GB) |
| نوع حافظه | — | NAND Flash |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| رابط | — | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| ولتاژ تغذیه | — | [DATA_NEEDED: supply voltage] |
| Block Size | — | [DATA_NEEDED: block size] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |