K9F1G08U0B-PCB0 vs K9F2808UOC-PCB0 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K9F1G08U0B-PCB0 sa pamamagitan ng Samsung Electronics at K9F2808UOC-PCB0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K9F1G08U0B-PCB0 - 1Gbit SLC NAND Flash 3.3V 48-TSOP | Samsung
K9F1G08U0B-PCB0 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K9F1G08U0B-PCB0 | K9F2808UOC-PCB0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | NRND |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $2.70 | — |
| Uri ng Memory | SLC NAND Flash (Non-Volatile) | NAND Flash (SLC, Small-Page) |
| Density | 1 Gbit (128 M x 8 bit) + 32 Mbit spare | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V (3.3 V typical) | — |
| Interface | 8-bit parallel (multiplexed address/data/command) | — |
| Page Size | 2 Kbyte + 64 byte spare | 528 bytes (512 main + 16 spare) |
| Block Size | 128 Kbyte + 4 Kbyte spare | 16 pages (16 KiB + 256 spare bytes) |
| Page Program Time (typ) | 300 us (max 700 us) | — |
| Block Erase Time (typ) | 2 ms (max 3 ms) | — |
| Endurance | 100 K program/erase cycles per block | — |
| Data Retention | 10 years | — |
| Temperature na Operasyon | 0C to +70C (commercial grade) | Commercial / Industrial (C, I grade) |
| Packhaging | 48-pin TSOP-I (Type I), 0.5 mm pitch | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Package Material | Molded plastic (high-quality thermal grade) | — |
| Access Time | 25 us (max) | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Memory Density | — | 128 Mbit (16M x 8) |
| Organisasyon | — | 16M x 8 bit |
| Operating Voltage (VCC) | — | 2.7 V to 3.6 V |
| Read Access Time | — | 50 ns |
| Package Options | — | 48-TSOP I, 48-WSOP1, 63-TBGA |
| I/O Bus Width | — | x8 |
| Command Set | — | Standard NAND (00h/01h/10h/30h/60h/D0h/50h) |
| Status Output | — | R/B# open-drain ready/busy |
| Technology Node | — | Samsung 2nd-generation SLC NAND |
| Cell Type | — | Single-Level Cell (SLC) |
| Programming Model | — | Page program, block erase |
| Lead-Free / RoHS | — | [DATA_NEEDED: RoHS status from Samsung datasheet] |