K9PKGY8S7M-CCK0 vs K9ADGD8S0A Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K9PKGY8S7M-CCK0 sa pamamagitan ng Samsung Electronics at K9ADGD8S0A sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung
K9PKGY8S7M-CCK0 ✓ NakahandaSamsung Electronics
K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung
K9ADGD8S0A ✗ Tapus ng BuhayPagsanggunian na paghahambing
| Parametro | K9PKGY8S7M-CCK0 | K9ADGD8S0A |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | EEPROM |
| Katayuan ng Lifecycle | Aktibo | Tapus ng Buhay |
| Memory Capacity | 128 Gb (16 GB) | — |
| Uri ng Memory | NAND Flash | — |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Packhaging | BGA | [DATA_NEEDED: package] |
| Uri ng Pagpapasok | Surface Mount | — |
| Interface | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | [DATA_NEEDED: interface type] |
| Volte ng Pagbibigay | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: endurance] |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| Tindminan RoHS | Lead free / RoHS compliant | — |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Device Type | — | 3D V-NAND flash memory bare die |
| Process Technology | — | Terabit Cell Array Transistor (TCAT) |
| Architecture | — | 3D vertical NAND (V-NAND) |
| Form Factor | — | Bare die (unpackaged) |
| Found In | — | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages |
| Known Application | — | Samsung 850 Pro 128 GB SSD |
| Memory Class | — | Non-volatile NAND flash |
| Documented By | — | TechInsights report SAR-1407-802 |
| Capacity | — | [DATA_NEEDED: die capacity] |